| u ^s.mi-conducto'i , l/ nc. 20 stern ave. springfield, new jersey 07081 u.s.a. designer's data sheet power field effect transistor n-channel enhancement-mode silicon gate tmos these logic lavej tmos power fets are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? low drive requirement to interface power loads to logic level ?cs or microprocessors ? vqs(th) s 2 volts m8x ? silicon gate for fast switching speeds ? switching times specified at 100*0 ? designer's data ? i&ss. vds(on)' vqs(th) a?d soa specified at elevated temperature ? rugged ?? soa is power dissipation limited ? source-to-drain diode characterized for use with inductive loads maximum ratings telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mtp12n08l MTP12N10L tmos power fets logic level amperes *ds(onj - 0.1sohm 80 and 700 volts rating draift'source voltage drain-gate voltage MTP12N10L 100 100 = 1s 12 30 75 0.6 -6510150 unit vdc v electrical characteristics ? continued itc = 2gc ufllessjknei-wise rioted) characteristic off characteristics (continued) gate-body leakage current, forward (vgsf* isvdc, vds = 0) gate body leakage currant. reverse (tj = kwo static drain-source on-resistance iv^g = $ v?, ip = 6 adc) drain-source on-voltage (vgs = s v) (id = 12 add llq = 6 ado. tj = 100ci forward transconductaaoe (vjjg = 10 v. iq = 6 a) vgs(thl rds(on) vos(on) 9fs 1 0.75 ? ? 5 2 1.s 0.18 2.4 1.6 ? vdc ohm vdc mhos dynamic characteristics input capacitance reverse transfer capacitance output capacitance vqs a 25 v, vqs a a f - 1 mhl vgs = 15 v- vds = 0. f = 1 mhr vdg = 25 v, vqs = 0- f - 1 mh* vgs = 1s v- vds = o. f ? i mhi vos w 25 v, vqs - 0. f = 1 mhz c;m crss coss ? ? ? ? ? 800 2600 350 1600 100 pf pf pf swttching characteristics (tj = 100*c) turn-on delay t?me rise time turn-off delay time fail time , total gate charge gate-source charge gate-drain charge ivdd= 25v. id = 6a. vgs = s v, r9en = 50 ohms) {vos " -8 r?ed vdss- t0 = 12 a. vqs = 5voe) see rgures 11 and 12. 'd(on) 'r 'd(off) ?f qa q^s 9d ? ? ? _ 1s(typ) 3.' ttvp) 11.3(typ) 50 iso 130 iso ss ? ? ns nc source drain wooe characteristics forward on-vo1?g? forward tum-on time reverse recovery time . |
